This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

LARGO, FL &#8212 Res-net Microwave Inc., a subsidiary of Electro Technik Industries, Inc., is introducing a miniature zero-bias Schottky diode detector to their current line of microwave and RF ...

Cree Inc. announces a series of packaged diodes that deliver one of the highest blocking voltages available in SiC Schottky technology. Cree Inc. announces a series of packaged diodes that deliver one ...

Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for ...

America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage ...

KYOTO, Japan, Oct. 23, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional VF/IR trade-off. This way, it delivers high ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

RIR Power Electronics Ltd announced the launch of its silicon carbide (SiC)-merged-PiN Schottky (MPS) diodes, marking a significant advancement in power device technology for next-generation electric ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 ...