LARGO, FL — Res-net Microwave Inc., a subsidiary of Electro Technik Industries, Inc., is introducing a miniature zero-bias Schottky diode detector to their current line of microwave and RF ...
A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
Cree Inc. announces a series of packaged diodes that deliver one of the highest blocking voltages available in SiC Schottky technology. Cree Inc. announces a series of packaged diodes that deliver one ...
America Semiconductor, LLC announced the release of its SD51 silicon power Schottky diodes. The DO-5 stud-mount parts feature a continuous forward current of 60 A, and repetitive peak reverse voltage ...
40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.
The junction composed of traditional metals and 2D semiconductors is a key component of semiconductor devices. Ideally, Schottky barrier height (SBH) can be obtained based on the relative alignment of ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 ...
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